Semiconductor device with a noise prevention structure

Details Semiconductor device with a noise prevention structure Semiconductor device with a noise prevention structure

2005-08-25

2008-12-23

Dang, Phuc T (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Contacts or leads including fusible link means or noise...

C257S781000, C257S506000, C257S459000

Reexamination Certificate

active

07468546

ABSTRACT:
A semiconductor device. The device includes a substrate of the first semiconductor type comprising a pad region and a noise prevention structure in the substrate, on least one side of the pad region. The device further includes the substrate structure, a pad, and a dielectric layer therebetween.

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