Semiconductor device with a mushroom-shaped gate electrode

Details Semiconductor device with a mushroom-shaped gate electrode Semiconductor device with a mushroom-shaped gate electrode

1991-12-05

1993-06-15

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Junction field effect transistor

257280, 257472, H01L 2980, H01L 27095

Patent

active

052201864

ABSTRACT:
A mushroom-shaped gate electrode has a lower end in a recess in a semiconductor active layer on a semiconductor substrate. The gate electrode has an enlarged head. A metallic side wall is disposed on a portion of the leg of the gate electrode adjacent the head. Thus, the gate length of a semiconductor device, such as a field effect transistor, is reduced while the effective cross-sectional area of the gate electrode is increased whereby the noise characteristics of the semiconductor device are improved.

REFERENCES:
patent: 4213840 (1980-07-01), Omori et al.
patent: 4808545 (1989-02-01), Balasubramanyan et al.
patent: 4935805 (1990-06-01), Calviello et al.
patent: 5057883 (1991-10-01), Noda
Wang et al., "A 0.1-.mu.m Al.sub.0.5 IN.sub.0.5 As/Ga.sub.0.5 IN.sub.0.5 As MODFET Fabricated on GaAs Substrates", IEEE Transactions on Electron Devices vol. 35, No. 7, Jul. 1988, pp. 818-823.
Jones et al., "Very Low-Noise HEMTs Using A 0.2 .mu.m T-Gate", Electronics Letters, vol. 23, No. 16, Jul. 1987, pp. 844-845.

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