Semiconductor device with a multi-stepped source region and meth

Details Semiconductor device with a multi-stepped source region and meth Semiconductor device with a multi-stepped source region and meth

1991-07-31

1992-05-05

Larkins, William D.

357 233, H01L 2978

Patent

active

051112582

ABSTRACT:
A semiconductor device includes a first region, a well-shaped second region formed in the first region and a third region formed in the well-shaped second region. Both the first region and the third region have a first conductive type, the well-shaped second region has a second conductive type. A gate electrode is formed on a channel of the well-shaped second region. The channel is sandwiched between the first region and the third region. According to the present invention, the depth of the third region is very deep in a portion near the channel and is very shallow in a portion far from the channel. A resistance of the well-shaped second region near a portion of the third region far from the channel is lower than near the portion of the third region near the channel.

REFERENCES:
patent: 4433468 (1984-02-01), Kawamata

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