Semiconductor device with a MOSFET formed in close proximity...

Details Semiconductor device with a MOSFET formed in close proximity... Semiconductor device with a MOSFET formed in close proximity...

2008-01-08

2008-01-08

Geyer, Scott B. (Department: 2812)

Semiconductor device manufacturing: process

Making regenerative-type switching device

C257SE21350

Reexamination Certificate

active

07316941

ABSTRACT:
In one embodiment, a thyristor device may be formed in series relationship with a MOSFET. Alternating regions of opposite conductivity type may be formed in semiconductor material for defining source, body and drain regions for the MOSFET device, and in series relationship to the thyristor. A primary dopant for a commonly-shared cathode/anode-emitter and drain/source region may have a concentration that is at least one order of magnitude greater than that of any background dopant therein. In a particular embodiment, the thyristor device and the MOSFET in series relationship therewith collectively define part of a thyristor-based memory.

REFERENCES:
patent: 6462359 (2002-10-01), Nemati et al.

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