Semiconductor device with a MOS structure and a manufacturing me

Details Semiconductor device with a MOS structure and a manufacturing me Semiconductor device with a MOS structure and a manufacturing me

1994-06-13

1996-06-11

Fourson, George

Fishing, trapping, and vermin destroying

437235, 437245, H01L 2144

Patent

active

055255442

ABSTRACT:
A first Al wire is connected to a gate electrode. On the first Al wire, an insulating film is provided. In the insulating film, an opening with a large cross-sectional area is made so as to correspond to the first Al wire. In the periphery of the opening, the insulating film is etched by RIE to make an opening. In the central area, the insulating film is etched by wet etching to make an opening. Inside the opening thus made, a second Al wire is formed. The second Al wire is connected to the first Al wire inside the opening. When the opening is made, the number of electrons trapped in the gate oxide film is small because the area etched by RIE is small. Since RIE etches the first Al wire deeper than wet etching, recesses are made around the first Al wire located inside the opening. The first and second Al wires are connected to each other via the recesses.

REFERENCES:
patent: 5409861 (1995-04-01), Choi
patent: 5422309 (1995-06-01), Zettler et al.

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