Semiconductor device with a metal layer for supplying a predeter

Details Semiconductor device with a metal layer for supplying a predeter Semiconductor device with a metal layer for supplying a predeter

1999-01-27

1999-08-03

Tran, Andrew Q.

Static information storage and retrieval

Interconnection arrangements

365 51, 365 53, 365228, 257659, 257660, G11C 506

Patent

active

059333642

ABSTRACT:
A semiconductor device according to the present invention includes: a semiconductor chip; and memory and logic sections formed on the semiconductor chip. The memory section includes: an array of memory cells; a sense amplifier circuit; and memory interconnects respectively provided in a number n (where n is a positive integer) of interconnect layers. The logic section includes logic circuits having logic interconnects respectively provided in a number n+m (where m is a positive integer) of interconnect layers. A metal layer is formed in one of (n+1)th to (n+m)th interconnect layers, covers the array of memory cells and supplies a predetermined potential to the memory section.

REFERENCES:
patent: 4494217 (1985-01-01), Suzuki et al.
patent: 4953002 (1990-08-01), Nelson et al.
patent: 5161124 (1992-11-01), Love
patent: 5375095 (1994-12-01), Yamada et al.
patent: 5475643 (1995-12-01), Ohta

Affiliated with

Also associated with

Rating

Semiconductor device with a metal layer for supplying a predeter does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device with a metal layer for supplying a predeter, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device with a metal layer for supplying a predeter will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-855610