Semiconductor device with a low resistance ohmic contact between

Details Semiconductor device with a low resistance ohmic contact between Semiconductor device with a low resistance ohmic contact between

1996-02-15

1997-07-29

Jackson, Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Specified wide band gap semiconductor material other than...

Diamond or silicon carbide

257741, H01L 310312

Patent

active

056524374

ABSTRACT:
The present invention is a semiconductor device comprising a semiconductor layer of SiC, a metal layer adapted to form a low resistance ohmic contact with the SiC-layer and a thin layer of a material having a smaller bandgap than the SiC of the SiC-layer and is placed between the SiC-layer and the metal layer. The SiC-layer is highly doped at least in the region next to the thin layer, and the material of the thin layer is a Group 3B-nitride including indium and at least another Group 3B-element.

REFERENCES:
patent: 3984261 (1976-10-01), Hawrylo
patent: 4985742 (1991-01-01), Pankove
patent: 4990994 (1991-02-01), Furukawa et al.
patent: 5273933 (1993-12-01), Hatano et al.
patent: 5373171 (1994-12-01), Imai et al.
Dimitriev et al., Low Resistivity (.about.10.sup.5 .omega.cm.sup.2) Ohmic Contacts to 6H Silicon Carbide Fabricated Using Cubic Silicon Carbide Contact Layer, Appl. Phys. Lett., vol. 64 (3), pp. 318-320 (Jan. 17, 1994) .

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