Active solid-state devices (e.g. – transistors – solid-state diode – Specified wide band gap semiconductor material other than... – Diamond or silicon carbide
Patent
1997-07-23
1999-12-21
Meier, Stephen D.
Active solid-state devices (e.g., transistors, solid-state diode
Specified wide band gap semiconductor material other than...
Diamond or silicon carbide
257347, H01L 310312, H01L 2701, H01L 2712, H01L 310392
Patent
active
060052619
ABSTRACT:
A semiconductor device has a first low-doped semiconductor layer of SiC, a second layer placed next thereto and a junction between these layers being adapted to hold a voltage in a blocking state of the device with a substantially thicker depletion layer in the first layer than in the second one. A junction edge termination is obtained by a position beveling of the junction, so that the area of the device decreases away from the second layer at least in the first layer close to the junction within at least a part of the depletion layer in the first layer and away therefrom by a peripheral bevel surface. The first and second layers are formed by a hexagonal SiC crystal having the c-axis oriented substantially perpendicular to the junction.
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D. Alok & B.J. Baliga, Argon Implanted SiC Device Edge Termination: Modelling, Analysis and Experimental Results: Silicon Carbide and Related Materials, edited by S. Nakashima, H. Matsunami, S. Yoshida & H. Harima, IOP Conf. Seroes vpl. 142, IOP, Bristol, 1996, pp. 565-568, Proceedings of ICSCRM-95, Sep., 1995.
ABB Research Ltd.
Meier Stephen D.
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