Semiconductor device with a high thermal dissipation efficiency

Details Semiconductor device with a high thermal dissipation efficiency Semiconductor device with a high thermal dissipation efficiency

2007-09-18

2007-09-18

Smith, Zandra V. (Department: 2822)

Semiconductor device manufacturing: process

Packaging or treatment of packaged semiconductor

Including adhesive bonding step

C438S118000, C438S109000, C438S122000, C257S707000, C257S720000, C257S722000, C257S733000

Reexamination Certificate

active

11148737

ABSTRACT:
Provides semiconductor devices and method for fabricating devices having a high thermal dissipation efficiency. An example device comprises a thermally conducting structure attached to a surface of the semiconductor device via soldering. The thermally conducting structure is essentially formed of a thermally conducting material and comprises an array of freestanding fins, studs or frames, or a grid of connected fins. A process for fabricating such a semiconductor device includes forming a thermally conducting structure on a carrier and attaching the thermally conducting structure formed on the carrier to a surface of the semiconductor device via soldering.

REFERENCES:
patent: 5842275 (1998-12-01), McMillan, II et al.
patent: 2003/0017634 (2003-01-01), Hirakata et al.
patent: 2004/0113283 (2004-06-01), Farnworth et al.
patent: 2005/0006763 (2005-01-01), Saimen

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