Semiconductor device with a high thermal dissipation efficiency

Details Semiconductor device with a high thermal dissipation efficiency Semiconductor device with a high thermal dissipation efficiency

2011-04-19

2011-04-19

Le, Thao X (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Housing or package

With provision for cooling the housing or its contents

C257S706000, C257S707000, C257S712000, C257S713000

Reexamination Certificate

active

07928565

ABSTRACT:
A semiconductor device having a higher thermal dissipation efficiency includes a thermally conducting structure attached to a surface of the semiconductor device via soldering. The thermally conducting structure is essentially formed of a thermally conducting material and comprises an array of freestanding fins, studs or frames, or a grid of connected fins. A process for fabricating such a semiconductor device includes forming a thermally conducting structure on a carrier and attaching the thermally conducting structure formed on the carrier to a surface of the semiconductor device via soldering.

REFERENCES:
patent: 6903929 (2005-06-01), Prasher et al.
patent: 2003/0017634 (2003-01-01), Hirakata et al.

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