Semiconductor device with a high-frequency interconnect

Details Semiconductor device with a high-frequency interconnect Semiconductor device with a high-frequency interconnect

2008-03-12

2010-06-15

Soward, Ida M (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S207000, C257S208000, C257S211000, C257SE21453

Reexamination Certificate

active

07737558

ABSTRACT:
Provided is a semiconductor device having a high-frequency interconnect, first dummy conductor patterns, an interconnect, and second dummy conductor patterns. The first dummy conductor patterns are arranged in the vicinity of the high-frequency interconnect, and the second dummy conductor patterns are arranged in the vicinity of the interconnect. The minimum value of distance between the high-frequency interconnect and the first dummy conductor patterns is larger than the minimum value of distance between the interconnect and the second dummy conductor patterns.

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