Semiconductor device with a high breakdown voltage device

Details Semiconductor device with a high breakdown voltage device Semiconductor device with a high breakdown voltage device

2007-09-10

2010-11-02

Monbleau, Davienne (Department: 2893)

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

Combined with field effect transistor

C257S466000, C257SE27014, C257SE27060

Reexamination Certificate

active

07825430

ABSTRACT:
An n−type semiconductor region is provided with an n−diffusion region serving as a drain region, and at one side of the n−diffusion region a p diffusion region and an n+diffusion region serving as a source region are provided. At an other side of the n−diffusion region a trench is provided and has an insulator introduced therein. Immediately under the n−diffusion region a p−buried layer is provided. In a region of the n−semiconductor region an n+diffusion region to which a high potential is applied is provided and electrically connected to the n−diffusion region by an interconnect having a resistor. On a surface of a portion of the p diffusion region that is sandwiched between the n+diffusion region and the n−diffusion region a gate electrode is provided, with a gate insulation film posed therebetween.

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