Semiconductor device with a high breakdown voltage characteristi

Details Semiconductor device with a high breakdown voltage characteristi Semiconductor device with a high breakdown voltage characteristi

1974-05-15

1976-07-20

James, Andrew J.

357 20, 357 38, 357 54, 357 58, 357 59, 357 90, H01L 2934

Patent

active

039710610

ABSTRACT:
A semiconductor device is provided having at least two semiconductor regions of opposite conductivity type and forming a planar-type PN junction. A field limiting ring is disposed spaced from the PN junction. A high-resistivity polycrystalline silicon layer covers the PN junction and the field limiting ring.

REFERENCES:
patent: 3335296 (1967-08-01), Smart
patent: 3391287 (1968-07-01), Kao et al.
patent: 3710204 (1973-01-01), Batz
patent: 3738880 (1973-06-01), Laker
patent: 3911473 (1975-10-01), Nienhuis
T. Kamins et al., "Diffusion of Impurities in Poly-Si," J. Appl. Phys., vol. 43, No. 1, Jan. 1972, pp. 83-91.
Y. Kao et al., "High-Voltage Planar P-N Junctions," Proc. IEEE, vol. 55, No. 8, Aug. 1967, pp. 1409-1414.

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