Patent
1981-09-18
1984-04-24
Edlow, Martin H.
357 17, 357 61, 357 4, H01L 29161
Patent
active
044451296
ABSTRACT:
Epitaxial thin layers of .alpha.-tin are grown by vapor phase epitaxy upon lattice-matched substrates of InSb or CdTe by the thermal decomposition of stannane. By using substrates of smaller lattice constant it is possible to modify the process to deposit .alpha.-tin germanium alloys.
REFERENCES:
patent: 3615856 (1971-10-01), Sommers, Jr.
patent: 3871017 (1975-03-01), Pratt, Jr.
Edlow Martin H.
International Standard Electric Corporation
Raden James B.
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