Semiconductor device with a graded passivation layer

Details Semiconductor device with a graded passivation layer Semiconductor device with a graded passivation layer

1998-01-05

2000-04-18

Hardy, David

Active solid-state devices (e.g., transistors, solid-state diode

With means to control surface effects

Insulating coating

257639, 257649, 257655, H01L 2348

Patent

active

060518766

ABSTRACT:
The formation of a graded passivation layer is disclosed. In one embodiment, a method includes four steps. In the first step, at least one transistor on a semiconductor substrate is provided. In the second step, at least one metallization layer is formed over the at least one transistor. In the third step, an oxide layer is deposited over the at least one metallization layer. Finally, in the fourth step, an ion implantation of a predetermined dopant is applied to create a graded passivation film over the at least one metallization layer.

REFERENCES:
patent: 4476621 (1984-10-01), Bopp et al.
patent: 5003062 (1991-03-01), Yen
patent: 5057897 (1991-10-01), Nariani et al.
patent: 5479054 (1995-12-01), Tottori
patent: 5598028 (1997-01-01), Losavio et al.
patent: 5716890 (1998-02-01), Yap

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