Semiconductor device with a frequency selective guard ring

Details Semiconductor device with a frequency selective guard ring Semiconductor device with a frequency selective guard ring

2006-02-07

2006-02-07

Huynh, Andy (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Passive components in ics

C257S376000, C257S394000, C257S409000, C257S379000, C257S516000, C257S528000, C257S532000

Reexamination Certificate

active

06995450

ABSTRACT:
A ring-shaped P+type diffusion region is formed on the top surface of a P type substrate in such a way as to surround a single internal circuit region. A shunt wiring is formed in an area including directly above the P+type diffusion region on the P type substrate. The shunt wiring is connected to the P+type diffusion region by a plurality of contacts. The shunt wiring is provided with an annular ring portion surrounding the internal circuit region. A meander inductor led out from the ring portion and the one end of the meander inductor is connected to a ground potential wiring. A resonance circuit is formed by a parasitic capacitor and the inductance of the shunt wiring. The parasitic capacitor is formed between the shunt wiring and the P+type diffusion region on the P type substrate.

REFERENCES:
patent: 5475255 (1995-12-01), Joardar et al.
patent: 6002161 (1999-12-01), Yamazaki
patent: H9-326468 (1997-12-01), None
patent: 2001-044277 (2001-02-01), None

Affiliated with

Also associated with

Rating

Semiconductor device with a frequency selective guard ring does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device with a frequency selective guard ring, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device with a frequency selective guard ring will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3655753