Semiconductor device with a diffusion barrier film having a...

Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation

Reexamination Certificate

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Details

C257S751000, C257S758000, C257S760000, C257SE23015, C438S612000, C438S622000, C438S627000, C438S643000, C438S653000

Reexamination Certificate

active

07663201

ABSTRACT:
The present invention provides a semiconductor device exhibiting an improved reliability. A semiconductor device comprises a semiconductor chip having an electrode on a surface thereof and a mounting substrate, and the electrode (aluminum electrode) of the semiconductor chip is coupled to the mounting substrate through a bump (solder bump104). A plurality of diffusion barrier films (UBM112) for preventing a diffusion of a material composing the bump is provided between the electrode and the bump, and the diffusion barrier film is formed to have a plurality of divided portions via spacings therebetween.

REFERENCES:
patent: 6191023 (2001-02-01), Chen
patent: 6913946 (2005-07-01), Lin
patent: 2002/0125569 (2002-09-01), Fukuda et al.
patent: 2004/0070079 (2004-04-01), Huang et al.
patent: 2005/0014356 (2005-01-01), Pozder et al.
patent: 2005/0140027 (2005-06-01), Fan
patent: 2005/0208751 (2005-09-01), Oh et al.
patent: 2000-299343 (2000-10-01), None

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