Semiconductor device with a diffusion barrier contact of a refra

Details Semiconductor device with a diffusion barrier contact of a refra Semiconductor device with a diffusion barrier contact of a refra

1987-11-20

1989-04-18

James, Andrew J.

357 71, H01L 2946

Patent

active

048231827

ABSTRACT:
A semiconductor device is disclosed, in which a titanium nitride film containing boron or carbon is provided between a semiconductor substrate and an aluminum film. Non-reacted substances in the titanium nitride film are rendered inactive by boron or carbon contained in the titanium nitride film. Thus, it is possible to improve the barrier properties of the titanium nitride film as mutual diffusion prevention film and also ensure good electric conductivity.

REFERENCES:
patent: 4502209 (1985-03-01), Eizenberg et al.
patent: 4574298 (1986-03-01), Yamagishi et al.

Affiliated with

Also associated with

Rating

Semiconductor device with a diffusion barrier contact of a refra does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device with a diffusion barrier contact of a refra, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device with a diffusion barrier contact of a refra will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2399564