Semiconductor device with a diffused resistor

Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics

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Details

257528, 257218, H01L 2900, H01L 27148, H01L 29768

Patent

active

059820195

ABSTRACT:
The object of the semiconductor apparatus to be used in the semiconductor integrated circuit is to restrain the time dependent fluctuations of the resistance value. To achieve the object, the semiconductor apparatus comprises an active area formed on one conductive type semiconductor substrate surface, a first impurity diffusion layer formed on the active area, of an inverted conductive type reverse in characteristics from the one conductive type, a second impurity diffusion layer of the reverse conductive type formed to cover the first impurity diffusion layer, and an electrode film formed through a field oxide film on the second impurity diffusion layer. The electric potential of the electrode film is kept at an electric potential where a majority carrier is induced into the second impurity diffusion layer.

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patent: 5181092 (1993-01-01), Atsumi
patent: 5608259 (1997-03-01), DeShazo et al.
patent: 5831317 (1998-11-01), Shimazaki

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