Semiconductor device with a different epitaxial thickness betwee

Details Semiconductor device with a different epitaxial thickness betwee Semiconductor device with a different epitaxial thickness betwee

1991-10-22

1993-10-26

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

With specified shape of pn junction

257654, 257565, 257296, 257368, H01L 2972, H01L 2702

Patent

active

052568989

ABSTRACT:
A p.sup.- semiconductor substrate has a surface which is high in a memory cell region and low in a peripheral circuit region. An n.sup.+ buried semiconductor layer of uniform thickness is formed on the substrate. An n.sup.- epitaxial layer formed on the buried semiconductor layer is thin in the memory cell region and thick in the peripheral circuit region, so that the surface of the epitaxial layer can be flat. A concave or convex step is formed on the surface of the epitaxial layer in a boundary portion between the memory cell region and the peripheral circuit region in order to use it as an alignment mark in a later processing step.

REFERENCES:
patent: 4486942 (1984-12-01), Hirao
patent: 5121185 (1992-06-01), Tamba et al.

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