Semiconductor device with a controlled cavity and method of...

Details Semiconductor device with a controlled cavity and method of... Semiconductor device with a controlled cavity and method of...

2011-07-26

2011-07-26

Geyer, Scott B (Department: 2812)

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

Having enclosed cavity

C438S048000, C257S414000

Reexamination Certificate

active

07985659

ABSTRACT:
A method for forming a semiconductor device includes providing a first cap wafer having a first opening extending through the first cap wafer, and a second cap wafer bonded to the first cap wafer, wherein the second cap wafer has a second opening extending through the second cap wafer, and wherein the first opening is misaligned with respect to the second opening. After the providing the first cap wafer and second cap wafer, the second cap wafer is bonded to a device wafer, wherein a cavity is formed between the device wafer and the second cap wafer, and wherein the device wafer comprises at least one semiconductor device in the cavity. After the bonding the second cap wafer to the device wafer, a vacuum is applied, wherein during the applying the vacuum, a sealing layer is formed over the first cap wafer, wherein the sealing layer seals the first opening.

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