Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified configuration
Reexamination Certificate
2011-04-12
2011-04-12
Gurley, Lynne A (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified configuration
C257S775000, C257SE23145
Reexamination Certificate
active
07923843
ABSTRACT:
Two interconnect layers are electrically connected while reducing the number of manufacturing steps. A contact plug9cwhich is formed into a beaded shape in a layer underlying two interconnects11C and11D and which also electrically connects the two interconnects11C and11D is included. The two interconnects11C and11D are separated to each other and are formed in a same layer. The contact plug9cis simultaneously formed with a contact plug9bto be connected to an interconnect4band a contact plug9ato be connected to a source/drain region6.
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Chinese Office Action dated Jun. 12, 2009 (with partial English translation).
Katsuki Nobuyuki
Kawakatsu Yasuhiro
Kobayashi Michihiro
Nikaido Hirofumi
Gurley Lynne A
McGinn IP Law Group PLLC
NEC Electronics Corporation
Webb Vernon P
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