Semiconductor device with a contact member made of semiconductor

Details Semiconductor device with a contact member made of semiconductor Semiconductor device with a contact member made of semiconductor

1995-03-15

1997-01-28

Limanek, Robert P.

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified configuration

257774, 257329, 257334, 257623, 257306, H01L 2702, H01L 2910

Patent

active

055980376

ABSTRACT:
A semiconductor device including: an insulated gate type transistor having a columnar semiconductor region formed on the main side of a semiconductor substrate, a gate electrode formed on the side surface of the columnar semiconductor region while interposing a gate insulating film and main electrode regions respectively formed on and formed below the columnar semiconductor region; and a memory element which is formed on the upper main electrode region and which can be broken electrically.

REFERENCES:
patent: 4853341 (1989-08-01), Nishioka et al.
patent: 4884121 (1989-11-01), Ishii
patent: 4924276 (1990-05-01), Heime et al.
patent: 5057896 (1991-10-01), Gotou
patent: 5072269 (1991-12-01), Hieda
patent: 5192988 (1993-03-01), Yoshii

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