Semiconductor device with a buffer structure

Details Semiconductor device with a buffer structure Semiconductor device with a buffer structure

1993-04-02

1994-10-04

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

With extended latchup current level

257149, 257155, 257156, 257169, H01L 2974

Patent

active

053529103

ABSTRACT:
The present invention is directed to power semiconductor devices and, more particularly, to a semiconductor device with a static induction buffer structure which reduces the resistance of a buffer layer, enhances the injection efficiency of holes from the anode and permits the application of a high-intensity electric field across the cathode and anode, and a semiconductor device with a drift buffer structure in which an impurity density (concentration) gradient is set in a buffer layer to generate an internal electric field for holes to enhance the injection efficiency of holes from the anode and increase the electron storage efficiency or and impurity density (concentration) gradient is set in an anode region to generate an internal electric field for electrons and a high-intensity electric field can be applied across the cathode and anode.

REFERENCES:
patent: 4275408 (1981-06-01), Yukimoto
patent: 4574296 (1986-03-01), Sueoka et al.
patent: 4617583 (1986-10-01), Shinohe et al.
patent: 4654679 (1987-03-01), Muraoka
patent: 4662957 (1987-05-01), Hagino
patent: 5151766 (1992-09-01), Huppi
Nishizawa et al, "Low-Loss High Speed Switching Device, 2500V-300A Static Induction Thyristor," PESC '85 Record, Proc. of the 16th Annual IEEE Power Electronics Specialists Conference, Toulouse, France, 1985, pp. 257-266.

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