Semiconductor device with a bipolar transistor formed in a layer

Details Semiconductor device with a bipolar transistor formed in a layer Semiconductor device with a bipolar transistor formed in a layer

1996-04-24

1997-05-13

Meier, Stephen

Active solid-state devices (e.g., transistors, solid-state diode

Bipolar transistor structure

With non-planar semiconductor surface

257587, 257588, H01L 27082, H01L 27102, H01L 2970, H01L 3111

Patent

active

056295545

ABSTRACT:
A semiconductor device with a bipolar transistor formed in a layer of semiconductor material (2) provided on an insulating substrate (1), in which material a collector zone (4), a base zone (5), and an emitter zone (6) are provided below a strip of insulating material (3) situated on the layer (2), which zones are connected to contact regions (7, 8, 9, 10) lying adjacent the strip (3), three of the contact regions (8, 9, 10) lying next to one another at a same side of the strip (3), of which two (8 and 9) are connected to the base zone (5) while the third (10), which lies between the former two (8 and 9), is connected to the emitter zone (6). The three contact regions (8, 9, 10) situated next to another at the same side of the strip (3) are provided alternately in the layer of semiconductor material (2) and in a further layer of semiconductor material (19) extending up to the strip (3). The three contact regions (8, 9, 10) connected to the base zone (5) and the emitter zone (6) may be provided with mutual interspacings which are smaller than the details which can be realised in a photoresist layer by means of the photolithographic process to be used in the manufacture of the transistor. As a result, the transistor can be manufactured with a very small extrinsic base.

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