Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2007-12-04
2007-12-04
Nguyen, Cuong (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257S762000
Reexamination Certificate
active
11063876
ABSTRACT:
A semiconductor device includes an interlevel insulating film disposed on a semiconductor substrate and having an opening formed therein. An interconnection main layer, which contains Cu as a main component, is embedded in the opening. A barrier film is interposed between the interlevel insulating film and the interconnection main layer within the opening. The barrier film contains, as a main component, a compound of a predetermined metal element with a component element of the interlevel insulating film.
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Koike Junichi
Nasu Hayato
Nishikawa Satoshi
Shibata Hideki
Shimizu Noriyoshi
Nguyen Cuong
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
Semiconductor Technology Academic Research Center
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