Semiconductor device with a 3-ply gate electrode

Details Semiconductor device with a 3-ply gate electrode Semiconductor device with a 3-ply gate electrode

1989-12-28

1990-08-21

Hille, Rolf

Fishing, trapping, and vermin destroying

357 22, 357 15, 437179, H01L 2348, H01L 2980, H01L 2948

Patent

active

049511211

ABSTRACT:
A semiconductor device comprising a compound semiconductor substrate whose surface is provided with a source region, a drain region and an interventing channel region; a source electrode formed on said source region; a drain electrode mounted on said drain region; and a 3-ply gate electrode formed on said channel region and consisting of a high melting metal layer, a barrier metal layer and a gold layer in that order.

REFERENCES:
patent: 4546540 (1985-10-01), Ueyanagi et al.
patent: 4574298 (1986-03-01), Yamagishi et al.
patent: 4650543 (1987-03-01), Kishita et al.
Kohn, E. "High Temperature Stable Metal-GaAs Contacts" 1979 IEEE IEDM pp. 469-472.

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