Active solid-state devices (e.g. – transistors – solid-state diode – Specified wide band gap semiconductor material other than... – Diamond or silicon carbide
Patent
1996-12-16
1998-02-17
Tran, Minh-Loan
Active solid-state devices (e.g., transistors, solid-state diode
Specified wide band gap semiconductor material other than...
Diamond or silicon carbide
257750, 257754, 257768, 257770, H01L 2348
Patent
active
057194106
ABSTRACT:
A MOSFET in which the gate electrode is formed of a polycrystalline silicon film, a silicon nitride film having a nitrogen surface density of lens than 8.times.10.sup.14 cm.sup.-2, and a tungsten film--these films formed one upon another in the order mentioned. The gate electrode thus formed, serves to shorten the delay time of the MOSFET.
REFERENCES:
patent: 5341016 (1994-08-01), Prall et al.
patent: 5356833 (1994-10-01), Maniar et al.
patent: 5445977 (1995-08-01), Fujimoto
Extended Abstracts (The 41st Spring Meeting, 1994); The Japan Society of Applied Physics and Related Societies, p. 684, Y. Akasaka, et al., 29p-ZH-14.
Extended Abstracts (The 41st Spring Meeting, 1994); The Japan Society of Applied Physics and Related Societies, p. 684, S. Suehiro, et al., 29p-ZH-13.
IEEE Electron Device Letters, vol. 15, No. 8, Aug. 1994, J.S. Reid, et al., "Ti-Si-N Diffusion Barriers Between Silicon and Copper", pp. 298-300.
Extended Abstracts of the 1994 International Conference on Solid State Devices and Materials, Yokohama, 1994, pp. 422-424, Tetsuo Hosoya, et al., "An Inexpensive Diffusion Barrier Technology for Polycide Gate Electrodes with an SiN Layer Formed with ECR Nitrogen Plasma".
IEEE Electron Device Letters, vol. 12, No. 6, Jun. 1991, pp. 321-323, E. Kolawa, et al., "Sputtered Ta-Si-N Diffusion Barriers in Cu Metallizations for Si".
"A Nitride-Isolated Molybdenum-Polysilicon Gate Electrode" T. Ito, et al.; VL,SI Symposium, May 1984, pp. 60-61.
Akasaka Yasushi
Iijima Tadashi
Nakajima Kazuaki
Suehiro Shintaro
Suguro Kyoichi
Kabushiki Kaisha Toshiba
Potter Roy
Tran Minh-Loan
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