Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Bump leads
Reexamination Certificate
2005-11-29
2005-11-29
Trinh, Michael (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Bump leads
C257S734000
Reexamination Certificate
active
06969910
ABSTRACT:
A semiconductor device has: a wiring board that includes an insulating substrate and a wiring provided on the insulating substrate; a semiconductor chip that is mounted on the wiring board; an opening that is formed at a predetermined position in the insulating substrate, one end of the opening being shut by the wiring to form the bottom of the opening; a thin film conductor that is formed on the surface of the wiring and at the bottom of the opening; an embedded conductor layer that is provided in the opening while contacting the thin film conductor formed at the bottom of the opening; and an external connection terminal that is disposed at the other end of the opening to electrically connect with the wiring through the embedded conductor layer and the thin film conductor provided in the opening. The thin film conductor includes gold plating layer formed on the surface, the external connection terminal is of tin or an alloy including tin, and the embedded conductor layer is of a conductor that has a rate of solution to tin or an alloy including tin lower than that of gold.
REFERENCES:
patent: 2004/0004285 (2004-01-01), Cheng et al.
patent: 10-041356 (1998-02-01), None
patent: 2001-203241 (2001-07-01), None
patent: 2003-152032 (2003-05-01), None
T. Takemoto et al., “High Reliability Micro-Soldering”, Kogyochosakai, 1991, p. 115.
Hitachi Cable Ltd.
Rose Kiesha
Trinh Michael
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