Semiconductor device whose semiconductor chip has chamfered...

Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – Outside periphery of package having specified shape or...

Reexamination Certificate

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Details

C257S773000, C257S775000

Reexamination Certificate

active

06933606

ABSTRACT:
A semiconductor element is formed in the major surface of a semiconductor chip. Curved surfaces having a radius of curvature of 0.5 to 50 μm are formed at at least some of edges where the side surfaces and backside surface of the semiconductor chip cross.

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patent: 5153700 (1992-10-01), Ohara et al.
patent: 5376179 (1994-12-01), Lee
patent: 6583512 (2003-06-01), Nakaoka et al.
patent: 2002/0050637 (2002-05-01), Sekiya
patent: 61-112345 (1986-05-01), None
patent: 2-240975 (1990-09-01), None
patent: 4-116849 (1992-04-01), None
patent: 5-206268 (1993-08-01), None
patent: 2000-340530 (2000-12-01), None
patent: 2002-16021 (2002-01-01), None

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