Semiconductor device whose flattening resin film component has a

Details Semiconductor device whose flattening resin film component has a Semiconductor device whose flattening resin film component has a

1997-12-09

1999-03-30

Hardy, David B.

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257759, 257 40, 257773, 257791, 257642, H01L 2941

Patent

active

058893300

ABSTRACT:
In a semiconductor device and a method of fabrication thereof, a resin film forms an interlayer film of the semiconductor device having a multilayer interconnection structure, and is formed by only one coating using coating liquid containing silicone ladder polymers represented by the chemical formula: (HO).sub.2 (R.sub.2 Si.sub.2 O.sub.3).sub.n H.sub.2. As a result, it is possible to improve long-term reliability of electric characteristics or the like, and simplify a process.

REFERENCES:
patent: 4349609 (1982-09-01), Takeda et al.
patent: 5399441 (1995-03-01), Bearinger et al.
patent: 5506177 (1996-04-01), Kishimoto et al.
patent: 5530293 (1996-06-01), Cohen et al.
patent: 5534731 (1996-07-01), Chevny
patent: 5548159 (1996-08-01), Jeng

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