Semiconductor device which relieves internal stress and prevents

Details Semiconductor device which relieves internal stress and prevents Semiconductor device which relieves internal stress and prevents

1991-02-20

1992-09-01

Hille, Rolf

357 4, 357 2315, 357 2, 357 236, H01L 4500, H01L 2712, H01L 2978, H01L 2968

Patent

active

051443910

ABSTRACT:
A semiconductor device according to the present invention comprises a semiconductor thin film, and first and second insulator films formed in such arrangement that the semiconductor thin film being sandwiched therebetween. First and second graded layers each containing a constitutent element of the semiconductor thin film and impurities and having a content of the impurities decreased in the direction of the semiconductor thin film are interposed between the semiconductor thin film and the respective insulator films, thereby to relax internal stress produced in the junction interfaces of the semiconductor thin film and the insulator films and to prevent cracking from occurring in the junction interfaces.

REFERENCES:
patent: 4621277 (1986-11-01), Ito et al.
patent: 4990977 (1981-02-01), Hack et al.
patent: 5005056 (1991-04-01), Motai et al.
J. Electrochem, Soc: Solid-State Science and Technology, Apr., 1978, pp. 601-608 "Reactive Plasma Deposited Si-N Films for MOS-LSI Passivation".
J. Appl. Phy. 65(10), May 15, 1989, pp. 3951-3957, "Gate Dielectric and Contact Effects in Hydrogenated Amorphous Silicon-Silicon Nitride Thin-Film Transistors".

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