Semiconductor device which includes contact plug and...

Details Semiconductor device which includes contact plug and... Semiconductor device which includes contact plug and...

2011-08-09

2011-08-09

Bryant, Kiesha R (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified configuration

C257SE21585, C257SE23141, C438S618000

Reexamination Certificate

active

07994642

ABSTRACT:
A semiconductor memory device includes: a first dielectric formed on top of a semiconductor substrate; a contact plug embedded in the first dielectric; a second dielectric formed on top of the first interlayer dielectric; an interconnection layer embedded in a groove formed in the second dielectric on top of the contact plug; and an insulating film formed in the second dielectric adjacent to a side surface of the interconnection layer. The contact plug has a notch in a part of a top surface of the contact plug. The insulating film is formed to extend from a top surface of the second dielectric to the notch included in the contact plug.

REFERENCES:
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patent: 2006-294979 (2006-10-01), None
Integration Technology of 30 nm Generation Multi-Level NAND Flash for 64 Gb NAND Flash Memory, Kwak et al., 2007 Symp. on VLSI Technology Digest of Technical Papers pp. 12-13.

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