Semiconductor device wherein n-channel MOSFET, p-channel MOSFET

Details Semiconductor device wherein n-channel MOSFET, p-channel MOSFET Semiconductor device wherein n-channel MOSFET, p-channel MOSFET

1992-11-19

1993-06-29

Wojciechowicz, Edward

Fishing, trapping, and vermin destroying

437 29, 437 34, 437 40, 437 48, 437 63, 437141, 437913, 257314, 257371, 257374, H01R 2122, H01L 2702

Patent

active

052234517

ABSTRACT:
An n-channel MOSFET, a p-channel MOSFET and a nonvolatile memory cell are provided for the same semiconductor substrate. The nonvolatile memory cell is formed on the semiconductor substrate, the n-channel MOSFET is formed in a p-type well region of the semiconductor substrate, and the p-channel MOSFET is formed in an n-type well region of the semiconductor substrate.

REFERENCES:
patent: 4893164 (1990-01-01), Shirato

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