Semiconductor device utilizing multiple capacitors each...

Details Semiconductor device utilizing multiple capacitors each... Semiconductor device utilizing multiple capacitors each...

2007-05-01

2007-05-01

Chambliss, Alonzo (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Passive components in ics

C257S594000, C257SE27048, C438S171000, C438S239000

Reexamination Certificate

active

11075688

ABSTRACT:
A semiconductor device includes a first transistor having a first gate oxide layer with a first thickness; a second transistor having a second gate oxide layer with a second thickness different from the first thickness; and at least one of a capacitor and a variable capacitance diode. One of the capacitor and the variable capacitance diode includes a first electrode having a first area and a second area; a second electrode formed in the first area with the first gate oxide layer in between; and a third electrode formed in the second area with the second gate oxide layer in between. The second electrode and third electrode have comb shapes nested inside one another.

REFERENCES:
patent: 5691223 (1997-11-01), Pittikoun et al.
patent: 6410955 (2002-06-01), Baker et al.
patent: 6509245 (2003-01-01), Baker et al.
patent: 6677637 (2004-01-01), Bernstein et al.
patent: 6913966 (2005-07-01), Baker et al.
patent: 2002-261298 (2002-09-01), None
patent: 2002-353469 (2002-12-01), None

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