Semiconductor device utilizing a pedestal collector region and m

Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Lateral bipolar transistor structure

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Details

257559, 257583, 257592, H01L 2900, H01L 2782, H01L 27102, H01L 2970

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active

058805168

ABSTRACT:
A semiconductor device having an epitaxial layer of one conductivity type formed on a semiconductor substrate of the other conductivity type, a base region of the other conductivity type formed on the epitaxial layer to extend from a surface of the epitaxial layer to a predetermined depth, the base region including an intrinsic base region and an external base region, an emitter region of the one conductivity type formed in the intrinsic base region, and a pedestal collector region of the one conductivity type formed in a portion of the epitaxial layer which is immediately under the base region to correspond thereto, wherein the pedestal collector region comprises a plurality of layers of pedestal collector regions which have an impurity concentration that changes in a direction of depth of the substrate and which are sequentially arranged in the direction of depth of the substrate.

REFERENCES:
patent: 4165516 (1979-08-01), Smulders
patent: 4392149 (1983-07-01), Horng et al.
patent: 4996581 (1991-02-01), Hamasaki
patent: 5432104 (1995-07-01), Sato
patent: 5525833 (1996-06-01), Jang
patent: 5548158 (1996-08-01), Bulucea et al.
patent: 5581115 (1996-12-01), Grubisich et al.
IBM Technical Disclosure Bulletin, vol. 26, No. 2, Jul. 1983, Dumke.

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