Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Lateral bipolar transistor structure
Patent
1996-08-28
1999-03-09
Ngo, Ngan V.
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Lateral bipolar transistor structure
257559, 257583, 257592, H01L 2900, H01L 2782, H01L 27102, H01L 2970
Patent
active
058805168
ABSTRACT:
A semiconductor device having an epitaxial layer of one conductivity type formed on a semiconductor substrate of the other conductivity type, a base region of the other conductivity type formed on the epitaxial layer to extend from a surface of the epitaxial layer to a predetermined depth, the base region including an intrinsic base region and an external base region, an emitter region of the one conductivity type formed in the intrinsic base region, and a pedestal collector region of the one conductivity type formed in a portion of the epitaxial layer which is immediately under the base region to correspond thereto, wherein the pedestal collector region comprises a plurality of layers of pedestal collector regions which have an impurity concentration that changes in a direction of depth of the substrate and which are sequentially arranged in the direction of depth of the substrate.
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patent: 5548158 (1996-08-01), Bulucea et al.
patent: 5581115 (1996-12-01), Grubisich et al.
IBM Technical Disclosure Bulletin, vol. 26, No. 2, Jul. 1983, Dumke.
NEC Corporation
Ngo Ngan V.
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