Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including dielectric isolation means
Reexamination Certificate
2005-05-17
2005-05-17
Flynn, Nathan J. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Including dielectric isolation means
C257S506000, C257S508000, C438S424000, C438S435000, C438S439000
Reexamination Certificate
active
06894363
ABSTRACT:
A semiconductor device adopting shallow trench isolation for reducing an internal stress of a semiconductor substrate. The semiconductor device is composed of a semiconductor substrate provided with a trench for isolation, and an insulating film formed to cover the trench for relaxing an internal stress of the semiconductor substrate. The insulating film includes a first portion disposed to be opposed to a bottom of the trench, and a second portion disposed to be opposed to a side of the trench. A first thickness of the first portion is different from a second thickness of the second portion.
REFERENCES:
patent: 6074927 (2000-06-01), Kepler et al.
patent: 6248645 (2001-06-01), Matsuoka et al.
patent: 2001144170 (2001-05-01), None
Elpida Memory Inc.
Flynn Nathan J.
Forde Remmon R.
Hayes & Soloway P.C.
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