Semiconductor device using semiconductor nanowire and...

Details Semiconductor device using semiconductor nanowire and... Semiconductor device using semiconductor nanowire and...

2006-12-04

2008-10-21

Tran, Minh-Loan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

C257S746000, C257S653000, C257SE29327

Reexamination Certificate

active

07439560

ABSTRACT:
A semiconductor device, comprising a semiconductor nanowire having a first region with one of a PN junction and a PIN junction and a second region with a field effect transistor structure, a pair of electrodes connected to both ends of the semiconductor nanowire, and a gate electrode provided in at least a part of the second region via an insulating layer. The semiconductor nanowire has a P-type semiconductor portion and an N-type semiconductor portion, and one of the P-type semiconductor portion and the N-type semiconductor portion is a common structural element of both the first and second regions.

REFERENCES:
patent: 6872645 (2005-03-01), Duan et al.
patent: 6882051 (2005-04-01), Majumdar et al.
patent: 2005/0181587 (2005-08-01), Duan et al.

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