Semiconductor device using semiconductor BCN compounds

Details Semiconductor device using semiconductor BCN compounds Semiconductor device using semiconductor BCN compounds

1997-02-12

1999-04-20

Chaudhuri, Olik

Active solid-state devices (e.g., transistors, solid-state diode

Specified wide band gap semiconductor material other than...

Diamond or silicon carbide

257 85, 257103, H01L 310312

Patent

active

058959386

ABSTRACT:
Disclosed is a semiconductor device comprising a semiconductor BCN compound layer and a metallic BCN compound layer and/or an insulating BCN compound layer, wherein the semiconductor BCN compound layer and the metallic BCN compound layer and/or insulating BCN compound layer are stacked one upon the other.

REFERENCES:
patent: 5747118 (1998-05-01), Bunshah et al.
M. O. Watanabe, et al., "Electrical properties of BC.sub.2 N thin films prepared by chemical vapor deposition", J. Appl. Phys. 78 (4), Aug. 15, 1995, pp. 2880-2882.

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