Semiconductor device using MIS capacitor

Details Semiconductor device using MIS capacitor Semiconductor device using MIS capacitor

1989-06-16

1991-05-21

James, Andrew J.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

357 14, 357 236, 357 41, 307278, 307455, H01L 2702, H01L 2992, H01L 2968, H01L 2978

Patent

active

050180002

ABSTRACT:
A MIS capacitor to be implemented in a semiconductor device employing various or predetermined circuits, has a dielectric side electrode which is in contact with a buried layer provided on a semiconductor substrate through a dielectric film and a buried layer-side electrode connected to the buried layer. The buried layer-side electrode of the MIS capacitor is connected to a low-impedance side of the circuit employed therewith. This structure, when connected as such, is capable of reducing the influence of noise attributed to an .alpha.-ray and thereby operating the circuit stably. The semiconductor device using a MIS capacitor invention is adaptable to an emitter follower circuit and various logic circuits for preventing malfunction resulting from .alpha.-ray radiation.

REFERENCES:
patent: 3539880 (1970-11-01), Squire et al.
patent: 4247826 (1981-01-01), Gappa et al.
patent: 4609837 (1986-09-01), Yagyuu et al.
patent: 4633291 (1986-12-01), Koyama
patent: 4725744 (1988-02-01), Yagyuu et al.
patent: 4760432 (1988-07-01), Stoisiek et al.

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