Semiconductor device using metal nitride as insulating film

Details Semiconductor device using metal nitride as insulating film Semiconductor device using metal nitride as insulating film

2007-08-14

2007-08-14

Pham, Hoai (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S761000, C257SE23145

Reexamination Certificate

active

11362872

ABSTRACT:
A first insulating film is formed on a semiconductor substrate. A second insulating film made of insulating metal nitride is formed on the first insulating film. A recess is formed through the second insulating film and reaches a position deeper than an upper surface of the first insulating film. A conductive member is buried in the recess. A semiconductor device is provided whose interlayer insulating film can be worked easily even if it is made to have a low dielectric constant.

REFERENCES:
patent: 6180514 (2001-01-01), Yeh et al.
patent: 6291891 (2001-09-01), Higashi et al.
patent: 6605874 (2003-08-01), Leu et al.
patent: 6750541 (2004-06-01), Ohtsuka et al.
patent: 2004/0026364 (2004-02-01), Kihara et al.
patent: 09-246375 (1997-09-01), None
patent: 2001-230219 (2001-08-01), None
patent: 2002-124568 (2002-04-01), None
patent: 2003-17496 (2003-01-01), None
Japanese Office Action dated Oct. 31, 2006 (mailing date), issued in corresponding Japanese Patent Application No. 2002-133055.

Affiliated with

Also associated with

Rating

Semiconductor device using metal nitride as insulating film does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device using metal nitride as insulating film, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device using metal nitride as insulating film will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3836531