Semiconductor device using metal nitride as insulating film

Details Semiconductor device using metal nitride as insulating film Semiconductor device using metal nitride as insulating film

2006-05-09

2006-05-09

Pham, Hoai (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S761000

Reexamination Certificate

active

07042093

ABSTRACT:
A first insulating film is formed on a semiconductor substrate. A second insulating film made of insulating metal nitride is formed on the first insulating film. A recess is formed through the second insulating film and reaches a position deeper than an upper surface of the first insulating film. A conductive member is buried in the recess. A semiconductor device is provided whose interlayer insulating film can be worked easily even if it is made to have a low dielectric constant.

REFERENCES:
patent: 6180514 (2001-01-01), Yeh et al.
patent: 6291891 (2001-09-01), Higashi et al.
patent: 6605874 (2003-08-01), Leu et al.
patent: 6750541 (2004-06-01), Ohtsuka et al.
Ohtsuka et al.; Semiconductor Device and Method of Manufacturing the Same (U.S. Appl. No. 10/127,418—pending); filed Apr. 23, 2002.

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