Semiconductor device using low-k material as interlayer...

Details Semiconductor device using low-k material as interlayer... Semiconductor device using low-k material as interlayer...

2005-09-13

2005-09-13

Smoot, Stephen W. (Department: 2813)

Active solid-state devices (e.g., transistors, solid-state diode

With means to control surface effects

Insulating coating

C257S642000, C257S775000, C257SE23145

Reexamination Certificate

active

06943431

ABSTRACT:
A semiconductor element is formed over a surface of a semiconductor substrate. A first insulating film is formed over the surface of the semiconductor substrate, the first insulating film covering the semiconductor element. A second insulating film is formed over the first insulating film, the second insulating film having a dielectric constant lower than that of the first insulating film. A first wiring pattern is formed over the second insulating film. A conductive connection member buried in the second and first insulating films electrically interconnects the first wiring pattern and semiconductor element.

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K. Azuma et al., “Semiconductor Device and Method of Manufacturing the Same,” English Translation of JP 2001-274239 A, JPO, Oct. 2001.
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