Semiconductor device using low dielectric constant material...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Junction field effect transistor

Reexamination Certificate

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C438S214000

Reexamination Certificate

active

07091534

ABSTRACT:
The semiconductor device is capable of coping with speedup of operation using a low dielectric constant material film other than silicon. The base (10) formed by the substrate (11) and the low dielectric constant material film (12) whose relative dielectric constant is lower than silicon is provided. The semiconductor element layer including the MOS transistor (30) is adhered onto the surface of the base (10) for stacking. The transistor (30) is formed by using the island-shaped single-crystal Si film (31) and buried in the insulator films (15), (16) and (17). The multilayer wiring structure (18) is formed on the semiconductor element layer and is electrically connected to the transistor (30). The electrode (20) functioning as a return path for the signals is formed on the back surface of the base (10). Instead of forming the electrode (20) on the base (10), the electrodes (20A) may be arranged on the back surface of the base (10A), configuring the base (10A) as an interposer.

REFERENCES:
patent: 6734477 (2004-05-01), Moise et al.
patent: 0486318 (1992-05-01), None
patent: 0570224 (1993-11-01), None
patent: 0703619 (1996-03-01), None
patent: 2001-196374 (2001-07-01), None
patent: WO 99/45588 (1999-09-01), None
International Search Report, completed Feb. 24, 2003.
Lee, Kang Wook et al, “Development of Three-Dimensional Integration Technology for Highly Parallel Image-Processing Chip”, Jpn. J. Appl. Phys. vol. 39 (2000) pp. 2473-2477, Part I, No. 4B, Apr. 2000.
Kurino, H. et al, “Intelligent Image Sensor Chip with Three Dimensional Structure”, Dept. of Machine Intelligence and Systems Engineering, Tohoku University, 1999 IEEE, 5 pages.

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