Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2011-07-05
2011-07-05
Williams, Alexander O (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257SE23052, C257S675000, C257S676000, C257S784000, C257S786000, C257S684000, C257S796000, C174S259000, C420S577000
Reexamination Certificate
active
07973412
ABSTRACT:
In a semiconductor device bonded to a motherboard with a bonding material having a melting point of 200° C. to 230° C., a bonding material15which is a die bonding material for bonding a semiconductor element13to a semiconductor substrate11is a Bi alloy containing 0.8 wt % to 10 wt % of Cu and 0.02 wt % to 0.2 wt % of Ge, so that the bonding material15for bonding the semiconductor element13to the semiconductor substrate11is not melted when the semiconductor device is bonded to the motherboard by reflowing. It is therefore possible to suppress poor connection on the semiconductor element13, thereby securing the mountability and electrical reliability of the semiconductor device.
REFERENCES:
patent: 4663649 (1987-05-01), Suzuki et al.
patent: 4935336 (1990-06-01), Yamada et al.
patent: 6365097 (2002-04-01), Yamashita et al.
patent: 6554180 (2003-04-01), Katoh et al.
patent: 6703113 (2004-03-01), Takaoka et al.
patent: 7345570 (2008-03-01), Kawanishi
patent: 2002/0012608 (2002-01-01), Takaoka et al.
patent: 2002/0106302 (2002-08-01), Habu et al.
patent: 2003/0111728 (2003-06-01), Thai et al.
patent: 2004/0170524 (2004-09-01), Lambracht et al.
patent: 2005/0029666 (2005-02-01), Kurihara et al.
patent: 2005/0218525 (2005-10-01), Takahashi et al.
patent: 2006/0239854 (2006-10-01), Uenishi et al.
patent: 2009/0242249 (2009-10-01), Furusawa et al.
patent: 2010/0294550 (2010-11-01), Furusawa et al.
patent: 2006-167790 (2006-06-01), None
patent: 2007-90407 (2007-04-01), None
patent: 2007-313526 (2007-12-01), None
patent: WO 02/097145 (2002-12-01), None
patent: WO 2007/136009 (2007-11-01), None
Fujiwara Seiji
Furusawa Akio
Suetugu Kenichirou
Tomita Yoshihiro
Panasonic Corporation
Steptoe & Johnson LLP
Williams Alexander O
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