Semiconductor device using insulation coated metal substrate

Details Semiconductor device using insulation coated metal substrate Semiconductor device using insulation coated metal substrate

1991-09-20

1993-03-16

LaRoche, Eugene R.

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

174250, 257790, H05K 328

Patent

active

051949334

ABSTRACT:
A semiconductor device using an insulation coated metal substrate includes semiconductor elements supported on an insulation coated metal substrate which is made of a metal substrate and an insulation layer disposed on the metal substrate, a wiring of a metallic foil formed on the insulation layer and connected to the semiconductor elements, an insulative sealing material covering the semiconductor elements and the wiring, and a solid insulation with a larger specific inductive capacity than that of the sealing material which is interposed between an edge part of the wiring and the sealing material.

REFERENCES:
patent: 4528064 (1985-07-01), Ohsawa et al.
patent: 4677252 (1987-06-01), Takahashi et al.

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