Semiconductor device using insulating film of low dielectric...

Details Semiconductor device using insulating film of low dielectric... Semiconductor device using insulating film of low dielectric...

2006-05-23

2006-05-23

Loke, Steven (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified configuration

C257S774000, C257S775000, C257S776000

Reexamination Certificate

active

07049701

ABSTRACT:
At least one electrode pad is formed above the surface of a semiconductor substrate. A multilevel interconnection configuration is formed between the electrode pad and the semiconductor substrate. The multiple levels of interconnections in the multilevel interconnection configuration are insulated from one another by an insulating film of low dielectric constant. A dummy interconnection configuration is formed at least within the insulating film around the periphery of the electrode pad.

REFERENCES:
patent: 6399897 (2002-06-01), Umematsu et al.
patent: 3121311 (2000-10-01), None
patent: 2000-349447 (2000-12-01), None

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