Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – With contact or metallization configuration to reduce...
Patent
1994-12-23
1996-03-12
Hille, Rolf
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
With contact or metallization configuration to reduce...
257508, 257409, 257630, 257913, H01L 2900
Patent
active
054988985
ABSTRACT:
A semiconductor device comprises a semiconductor substrate a field-shield electrode made of a thin film of at least one of polysilicon and amorphous silicon and formed on a surface of an element-isolation region of the substrate with an insulating film interposed therebetween for defining an active region in the substrate and a transistor having a gate electrode formed on a surface of the active region of the substrate with a gate insulating film interposed between the substrate and the gate electrode wherein the field-shield electrode is connected to a predetermined potential and the insulating film has a thickness of 5 nm-10 nm which is less than a thickness of the gate insulating film of the transistor.
REFERENCES:
patent: 5164806 (1992-11-01), Nagatomo et al.
Wakayama et al., Fully Planarized O.5 .mu.m Technologies for 16M Dram, IEDM-88, 1988, pp. 246-279.
Hille Rolf
Nippon Steel Corporation
Tran Minhloan
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