Semiconductor device using a refractory metal as an electrode an

Details Semiconductor device using a refractory metal as an electrode an Semiconductor device using a refractory metal as an electrode an

1986-02-18

1987-11-17

James, Andrew J.

357 71, 357 59, H01L 2354

Patent

active

047077239

ABSTRACT:
A semiconductor device in which a multilayer film comprising a low resistance refractory metal silicide film and a low resistance ternary alloy film formed thereon and having corrosion resistance to hydrofluoric acid is used as an electrode and interconnection. The above stated low resistance refractory metal silicide is titanium silicide or tantalum silicide. The above stated ternary alloy is titanium-M-silicon or tantalum-M-silicon, M being any of molybdenum, tungsten, niobium, vanadium and tantalum.

REFERENCES:
patent: 3855612 (1974-12-01), Rosvold
patent: 4507851 (1985-04-01), Joyner et al.
patent: 4566021 (1986-01-01), Yokoyama
"MO/Ti Bilayer Metallization for a Self-Aligned TiSi.sub.2 Process", H. K. Park et al., American Vacuum Society, Journal of Vacuum Science Technology, A, vol. 2, No. 2, Apr.-Jun. 1984, pp. 259-263.
"Refractory Silicide for Integrated Circuits", by S. P. Murarka, American Vacuum Society # J. Vac. Sci. Technol., vol. 17, No. 4, Jul./Aug. 1980, pp. 775 to 792.

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