Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Reexamination Certificate
2005-10-26
2011-11-15
Phung, Anh (Department: 2824)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
C257S057000, C257S059000, C257S072000, C257SE29273
Reexamination Certificate
active
08058652
ABSTRACT:
A semiconductor device having an island semiconductor film which is a channel formation region and a semiconductor film which is a source or drain region being in contact with a side face of the island semiconductor film, and a method for manufacturing the semiconductor device are disclosed. The manufacturing costs can be suppressed by forming the island semiconductor film which is to be a channel formation region and the semiconductor film which is to be a source or drain region without using a doping apparatus. The source or drain region is in contact with the side surface of the island semiconductor film which is the channel formation region, a depletion layer is broaden not only in a film thickness direction but also in the crosswise direction and an electric field due to drain voltage is relieved. Therefore, a semiconductor device with high reliability can be manufactured.
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Office Action (Application No. 200510118808.0) dated Jul. 4, 2008.
Bernstein Allison P
Phung Anh
Robinson Eric J.
Robinson Intellectual Property Law Office P.C.
Semiconductor Energy Laboratory Co,. Ltd.
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